* 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V
* Optimized for use in battery circuit applications
* Extended VGSS range (±10V.

with a wide range of gate drive voltage (2.5V
  – 10V). Applications
* Battery protection
* Load s.

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
  – 10V). A.

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